Yang, H.-N., Zhao, Y.-P., Wang, G.-C., Lu, T.-M.: Noise-induced roughening evolution of amorphous Si films grown by thermal evaporation. Yang, H.-N., Wang, G.-C., Lu, T.-M.: Diffraction from rough surfaces and dynamic growth fronts. Wolf, D.E., Villain, J.: Growth with surface diffusion. Cambridge University Press, Cambridge (1996) Wang, Z.L.: Reflection Electron Microscopy and Spectroscopy for Surface Analysis. Stroscio, J.A., Pierce, D.T., Dragoset, R.A.: Homoepitaxial growth of iron and a real space view of reflection-high-energy-electron diffraction. Stroscio, J.A., Pierce, D.T.: Scaling of diffusion-mediated island growth in iron-on-iron homoepitaxy. In: Larsen, P.K., Dobson, P.J., NATO ASI Series B Physics (eds.) Reflection High-Energy Electron Diffracion and Reflection Electron Imaging of Surfaces, vol. 188, pp. 427–447 (1988) Pukite, P.R., Cohen, P.I., Batra S.: The contribution of atomic steps to reflection high energy electron diffraction from semiconductor surfaces. Pukite, P.R., Lent, C.S., Cohen, P.I.: Diffraction from stepped surfaces. Pimbley, J.M., Lu, T.-M.: Integral representation of the diffracted intensity from one-dimensional stepped surfaces and epitaxial layers. Pimbley, J.M., Lu, T.-M.: Exact one-dimensional pair correlation functions of a monolayer/substrate system. Pimbley, J.M., Lu, T.-M.: Two-dimensional atomic correlations of epitaxial layers. Pimbley, J.M., Lu, T.-M.: Atomic correlations during the first stages of epitaxy. Pimbley, J.M., Lu, T.-M.: A two-dimensional random growth model in layer by layer epitaxy. Peng, L.-M.: Quasi-dynamical electron diffraction-a kinematic type of expressions for dynamical diffrated-beam amplitudes. Pelliccione, M., Lu, T.-M.: Evolution of Thin Film Morphology. Ohtake, A., Yasuda, T., Miyata, N.: Anisotropic kinetics on growing Ge(001) surfaces. Jr.: Spot-profile-analyzing LEED study of the epitaxial growth of Fe, Co, and Cu on Cu(100). Neave, J.H., Joyce, B.A., Bobson, P.J., Norton, N.: Dynamics of film growth of GaAs by MBE from RHEED observations. Mitura, Z., Dudarev, S.L., Peng, L.-M., Glasdyszewski, G., Whelan, M.J.: The small terrace size approximation in the theory of RHEED oscillations. Meyer-Ehmsen, G., Bölger, B., Larsen, P.K.: Characteristic features in RHEED patterns of disordered surfaces: theoretical considerations. Lu, T.-M., Wang, G.-C., Zhao, Y.-P.: Beyond intensity oscillations. Lent, C.S., Cohen, P.I.: Diffraction from stepped surfaces. (eds.) Reflection High-energy Electron Diffraction and Reflection Electron Imaging of Surfaces. Lagally, M.G., Savage, D.E., Tringides, M.C.: Diffraction from disordered surfaces: an overview. Jiang, Q., Chan, A., Wang, G.-C.: Dynamic scaling of island-size distribution in submonolayer growth of 1 × 1 films. Cambridge University Press, Cambridge (2004) Ichimiya, A., Cohen, P.I.: Reflection High Energy Electron Diffraction. Holmes, D.M., Sudijono, J.L., McConville, C.F., Jones, T.S., Joyce, B.A.: Direct evidence for the step density model in the initial stages of the layer-by-layer homoepitaxial growth of GaAs(111)A. Hahn, P., Clabes, J., Henzler, M.: LEED-investigations and work-function measurements of the first stages of epitaxy of tungsten on tungsten (110). World Scientific Publishing, Singapore (1991) 166, 123–140 (2005)ĭas Sarma, S., Tamborenea, P.I.: A new universality class for kinetic growth: one-dimensional molecular-beam epitaxy. 80(22), 4935–4938 (1998)ĭaniluk, A.: Dynamical calculations for RHEED intensity oscillations. E 47(5), 3242–3245 (1993)īraun, W., Daweritz, L., Ploog, K.H.: Origin of electron diffraction oscillations during crystal growth. This process is experimental and the keywords may be updated as the learning algorithm improves.Īmar, J.G., Lam, P.-M., Family, F.: Grove instabilities in surface growth with diffusion. These keywords were added by machine and not by the authors. More extensive discussion of RHEED in the transmission mode will be presented in Chaps. 6 and 7. In this chapter, we discuss kinematic treatment of electron scattering and the formulation of angular intensity distribution in both layer-by-layer and multilayer growths. X-ray can also be used for these purposes with a glancing incidence diffraction geometry, but it would require a very intense source such as synchrotron radiation. It is most useful for surfaces that possess a decent long-range order with perhaps some extended defects such as surface steps. This technique has been used extensively for the determination of surface structure and for studies of surface ordering. Before we discuss analysis of film textures by the x-ray pole figure and reflection high-energy electron diffraction (RHEED) pole figure (transmission mode) techniques, we present in this chapter a more familiar use of RHEED, the reflection mode.
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